CYD18S36V-100BBI
Rochester Electronics, LLC
Rochester Electronics, LLC
DUAL-PORT SRAM, 512KX36, 5.2NS
$239.98
Available to order
Reference Price (USD)
1+
$239.98000
500+
$237.5802
1000+
$235.1804
1500+
$232.7806
2000+
$230.3808
2500+
$227.981
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your systems with Rochester Electronics, LLC CYD18S36V-100BBI Memory ICs, engineered for efficiency and longevity. Ideal for servers, embedded systems, and portable devices, these ICs provide fast access times and stable operation under varying conditions. Features include advanced error correction, high density, and thermal stability. Trust Rochester Electronics, LLC CYD18S36V-100BBI for all your memory requirements. Submit your inquiry now and experience top-tier quality and service!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Dual Port
- Memory Size: 18Mb (512K x 36)
- Memory Interface: Parallel
- Clock Frequency: 100 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 256-LBGA
- Supplier Device Package: 256-FBGA (23x23)
Related Products
Infineon Technologies
S29GL256S10TFI010
Adesto Technologies
AT45DB041E-SSHN2B-T
GigaDevice Semiconductor (HK) Limited
GD25D05CTIGR
Microchip Technology
93LC56AT-I/ST
Microchip Technology
SST25PF040C-40V/MF
Microchip Technology
25LC010AT-E/SN
Infineon Technologies
S29JL032J60TFI420
Kaga FEI America, Inc.
MB85RC128APNF-G-JNE1
Infineon Technologies
STK17T88-RF25I
Rochester Electronics, LLC