D1230N18TXPSA1
Infineon Technologies
Infineon Technologies
DIODE GEN PURP 1.8KV 1230A
$144.20
Available to order
Reference Price (USD)
1+
$101.35000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic designs with D1230N18TXPSA1 Single Rectifier Diodes by Infineon Technologies, offering unparalleled efficiency and durability. Ideal for power supplies, inverters, and DC-DC converters, these diodes feature ultra-low leakage and high junction temperature tolerance. Their robust design ensures stable performance in extreme conditions. Whether for prototyping or mass production, Infineon Technologies has you covered. Request a quote or technical support today!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800 V
- Current - Average Rectified (Io): 1230A
- Voltage - Forward (Vf) (Max) @ If: 1.063 V @ 800 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 mA @ 1800 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 180°C
Related Products
Nexperia USA Inc.
PMEG45A10EPDAZ
Diodes Incorporated
SBR8U60P5Q-13D
NTE Electronics, Inc
NTE635
Microchip Technology
CDLL6761
Panjit International Inc.
BAS21_R1_00001
Global Power Technology-GPT
G5S06505AT
Vishay General Semiconductor - Diodes Division
VBT4045BP-E3/4W
Taiwan Semiconductor Corporation
UF1JLW
Nexperia USA Inc.
PMEG2010EH,115
SMC Diode Solutions