DD1200S12H4HOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 1200A
$974.20
Available to order
Reference Price (USD)
2+
$616.96500
Exquisite packaging
Discount
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Infineon Technologies's DD1200S12H4HOSA1 IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 1200 A
- Power - Max: 1200000 W
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 1200A
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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