DD1200S17H4B2BOSA2
Infineon Technologies
Infineon Technologies
DIODE MODULE 1200V 1200A
$1,446.94
Available to order
Reference Price (USD)
2+
$951.94000
Exquisite packaging
Discount
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Discover high-quality DD1200S17H4B2BOSA2 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category, specifically designed for Diodes - Rectifiers - Arrays applications. Our products are engineered for reliability and efficiency, making them ideal for various industrial and commercial uses. The DD1200S17H4B2BOSA2 features excellent performance in rectification and array configurations, ensuring stable and consistent operation. Whether you need components for power supplies, converters, or other electronic devices, Infineon Technologies's diodes are the perfect choice. Contact us today for more details and to request a quote!
Specifications
- Product Status: Active
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1700 V
- Current - Average Rectified (Io) (per Diode): -
- Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 1200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1250 A @ 900 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-IHMB130-1
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