DDA114TUQ-13-F
Diodes Incorporated
Diodes Incorporated
PREBIAS TRANSISTOR SOT363 T&R 10
$0.06
Available to order
Reference Price (USD)
1+
$0.06326
500+
$0.0626274
1000+
$0.0619948
1500+
$0.0613622
2000+
$0.0607296
2500+
$0.060097
Exquisite packaging
Discount
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Discover high-quality DDA114TUQ-13-F Bipolar Junction Transistor (BJT) Arrays from Diodes Incorporated, designed for reliable performance in various electronic applications. These pre-biased transistor arrays offer excellent switching and amplification capabilities, making them ideal for compact circuit designs. Common applications include signal processing, driver circuits, and load switching in consumer electronics, industrial controls, and automotive systems. Features include matched pairs for consistent performance, low saturation voltage, and thermal stability. Upgrade your electronic projects with Diodes Incorporated's precision-engineered components. Contact us today for pricing and availability submit your inquiry now!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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