DDA124EH-7
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS DUAL PNP SOT563
$0.52
Available to order
Reference Price (USD)
3,000+
$0.16233
6,000+
$0.15351
15,000+
$0.14469
30,000+
$0.13440
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing Diodes Incorporated's DDA124EH-7 advanced Pre-Biased Transistor Arrays engineered for modern electronics. These BJT arrays provide ready-to-use solutions with internal resistor networks, significantly reducing design complexity and BOM costs. Application highlights include power supply circuits, display drivers, and microcontroller interfaces in automotive, aerospace, and industrial environments. Technical features comprise low VCE(sat), tight current gain matching, and RoHS compliance for environmental safety. Diodes Incorporated stands behind every DDA124EH-7 unit with rigorous quality testing. Streamline your procurement process contact our sales team via the inquiry form for personalized assistance!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Panasonic Electronic Components
XP0421200L
Nexperia USA Inc.
PEMH10,115
Diodes Incorporated
UMC5NQ-7
Toshiba Semiconductor and Storage
RN1709JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2703,LF
Nexperia USA Inc.
NHUMH2F
Toshiba Semiconductor and Storage
RN4906,LF
onsemi
NSBC124XDXV6T1
onsemi
NSVMUN5214DW1T3G
Toshiba Semiconductor and Storage