DDC114YUQ-7-F
Diodes Incorporated
Diodes Incorporated
PREBIAS TRANSISTOR SOT363 T&R 3K
$0.07
Available to order
Reference Price (USD)
1+
$0.06996
500+
$0.0692604
1000+
$0.0685608
1500+
$0.0678612
2000+
$0.0671616
2500+
$0.066462
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience precision engineering with Diodes Incorporated's DDC114YUQ-7-F Bipolar Junction Transistor Arrays, the optimal solution for space-efficient designs. These pre-biased components eliminate external resistor needs while providing predictable performance in amplification and switching roles. Application sectors include automotive electronics, power tools, and renewable energy systems where reliability is paramount. The product family offers multiple configuration options, all featuring low quiescent current, high gain bandwidth product, and robust EMC performance. Diodes Incorporated provides comprehensive technical resources for DDC114YUQ-7-F integration. Take the next step request a quote or design consultation through our convenient inquiry portal!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
Related Products
Rohm Semiconductor
DTA015EUBTL
NXP USA Inc.
PUMB20,115
Nexperia USA Inc.
PUMD2,165
onsemi
MUN5131DW1T1G
Diodes Incorporated
ACX114EUQ-7R
Diodes Incorporated
DDC114EU-7-F
Rohm Semiconductor
EMD3T2R
Diodes Incorporated
DCX114YUQ-7-F
onsemi
MUN5114DW1T1G
onsemi