DDC123JH-7
Diodes Incorporated
Diodes Incorporated
TRANS 2NPN PREBIAS 0.15W SOT563
$0.10
Available to order
Reference Price (USD)
3,000+
$0.16233
6,000+
$0.15351
15,000+
$0.14469
30,000+
$0.13440
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic designs with Diodes Incorporated's DDC123JH-7 BJT Array solution, offering pre-configured biasing for immediate implementation. These transistor arrays excel in switching and linear applications where space and efficiency are critical. The product series demonstrates superior characteristics: thermal shutdown protection, high-frequency response, and ESD protection for durable performance. Commonly deployed in battery-powered devices, motor controllers, and audio amplifiers across multiple industries. Diodes Incorporated combines decades of semiconductor experience with cutting-edge manufacturing techniques. Don't compromise on quality request samples or volume pricing for DDC123JH-7 through our quick inquiry system!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Panasonic Electronic Components
UP0431400L
Nexperia USA Inc.
PUMD6,135
Toshiba Semiconductor and Storage
RN4985,LF(CT
Toshiba Semiconductor and Storage
RN1903,LXHF(CT
Nexperia USA Inc.
PUMH17F
onsemi
SMUN5213DW1T1G
Nexperia USA Inc.
NHUMD3X
Nexperia USA Inc.
PEMD2,115
Nexperia USA Inc.
PUMH2F
Diodes Incorporated