DDTA114GE-7-F
Diodes Incorporated

Diodes Incorporated
TRANS PREBIAS PNP 150MW SOT523
$0.06
Available to order
Reference Price (USD)
3,000+
$0.06538
Exquisite packaging
Discount
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Discover high-quality DDTA114GE-7-F from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category. Our Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for efficiency and reliability, making them ideal for various electronic applications. These transistors feature excellent performance, low power consumption, and robust construction. Perfect for amplification and switching circuits, they are widely used in consumer electronics, automotive systems, and industrial equipment. Trust Diodes Incorporated for superior semiconductor solutions. Contact us today for a quote or more information!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): -
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-523
- Supplier Device Package: SOT-523