DDTA115EUA-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS PNP 200MW SOT323
$0.05
Available to order
Reference Price (USD)
3,000+
$0.04707
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DDTA115EUA-7-F by Diodes Incorporated is a premier choice in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for precision and efficiency, featuring high gain bandwidth, low distortion, and excellent thermal management. Perfect for RF applications, sensor interfaces, and control systems. Diodes Incorporated stands for quality and innovation. Reach out to us for expert advice and competitive pricing!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 100 kOhms
- Resistor - Emitter Base (R2): 100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
Related Products
Rohm Semiconductor
DTA124XMFHAT2L
Nexperia USA Inc.
PDTD143ETR
Toshiba Semiconductor and Storage
RN1117MFV,L3F
onsemi
DTA144EM3T5G
NTE Electronics, Inc
NTE2416
Toshiba Semiconductor and Storage
RN1104MFV,L3F(CT
Nexperia USA Inc.
PDTC144EQAZ
Diodes Incorporated
DDTA114WUA-7-F
onsemi
MUN5233T1
Diodes Incorporated