DDTA124XCA-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS PNP 200MW SOT23-3
$0.33
Available to order
Reference Price (USD)
3,000+
$0.03864
6,000+
$0.03360
15,000+
$0.02856
30,000+
$0.02688
75,000+
$0.02520
150,000+
$0.02240
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your circuits with the DDTA124XCA-7-F from Diodes Incorporated, a leader in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single, Pre-Biased deliver unmatched performance and durability. Features include high current capacity, minimal leakage, and robust packaging. Ideal for use in IoT devices, robotics, and power supplies. Diodes Incorporated provides reliable and innovative solutions. Inquire today for more details or to place an order!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
Related Products
Toshiba Semiconductor and Storage
RN2304,LXHF
Toshiba Semiconductor and Storage
RN1102,LXHF(CT
Diodes Incorporated
DDTA144ECAQ-13-F
Rohm Semiconductor
DTC115EEBTL
Rohm Semiconductor
DTC114EETL
NXP USA Inc.
PDTA143ZE,115
Diodes Incorporated
DDTA142TU-7-F
Toshiba Semiconductor and Storage
RN2107MFV,L3F(CT
Nexperia USA Inc.
PDTD123EUF
Toshiba Semiconductor and Storage