DDTB123YC-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS PNP 200MW SOT23-3
$0.05
Available to order
Reference Price (USD)
3,000+
$0.04707
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic designs with the DDTB123YC-7-F by Diodes Incorporated, a standout in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased are engineered for superior performance and longevity. Notable features include low noise, high frequency response, and excellent thermal characteristics. Suitable for audio amplifiers, LED drivers, and motor control circuits. Diodes Incorporated is committed to delivering high-quality components. Request a quote or additional information today!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
Related Products
Diodes Incorporated
DDTC143FUA-7-F
Infineon Technologies
BCR196E6327HTSA1
Infineon Technologies
BCR158WH6327
NXP USA Inc.
PDTA144WE,115
Panasonic Electronic Components
DRC5114T0L
Toshiba Semiconductor and Storage
RN1426TE85LF
Diodes Incorporated
DDTD133HC-7-F
Diodes Incorporated
DDTD122TU-7-F
Infineon Technologies
BCR135E6327HTSA1
onsemi