DDTC123ECAQ-7-F
Diodes Incorporated
Diodes Incorporated
PREBIAS TRANSISTOR SOT23 T&R 3K
$0.04
Available to order
Reference Price (USD)
1+
$0.03974
500+
$0.0393426
1000+
$0.0389452
1500+
$0.0385478
2000+
$0.0381504
2500+
$0.037753
Exquisite packaging
Discount
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The DDTC123ECAQ-7-F by Diodes Incorporated is a trusted name in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased are built to meet the highest industry standards, offering reliability and efficiency. Key features include high power dissipation, stable operation, and easy integration. Widely used in computing, aerospace, and defense applications. Diodes Incorporated ensures top-tier performance and support. Contact us now to discuss your requirements!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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