DDTD113ZC-7-F
Diodes Incorporated
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT23-3
$0.32
Available to order
Reference Price (USD)
3,000+
$0.05753
6,000+
$0.05060
15,000+
$0.04367
30,000+
$0.04136
75,000+
$0.03905
150,000+
$0.03520
Exquisite packaging
Discount
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Upgrade your projects with the DDTD113ZC-7-F by Diodes Incorporated, a top-tier choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased offer outstanding durability and precision, ensuring optimal performance in any circuit. Key features include high current gain, low saturation voltage, and thermal stability. Ideal for use in power management, signal processing, and automation systems. Diodes Incorporated guarantees top-notch quality and performance. Reach out now to learn more or request a sample!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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