DF150R12RT4HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 150A 790W
$51.01
Available to order
Reference Price (USD)
10+
$52.09700
Exquisite packaging
Discount
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The DF150R12RT4HOSA1 IGBT Module from Infineon Technologies delivers superior performance for demanding power control tasks. With features such as short-circuit protection and high-frequency operation, it's suited for solar inverters, industrial automation, and more. Trust Infineon Technologies for cutting-edge Discrete Semiconductor Products. Request a sample now!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Chopper
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 790 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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