DF900R12IP4DVBOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 900A 5100W
$496.98
Available to order
Reference Price (USD)
3+
$505.68000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's DF900R12IP4DVBOSA1 IGBT Module is engineered for high-power applications requiring stability and longevity. Key features include integrated temperature monitoring and low EMI emissions, perfect for medical devices and traction systems. Choose quality contact us for technical specifications and lead times.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Configuration: Single Chopper
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 900 A
- Power - Max: 5100 W
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
IXYS
IXDN55N120D1
Infineon Technologies
FF225R12ME4PBPSA1
Microchip Technology
APTCV60TLM99T3G
Infineon Technologies
FF1400R17IP4PBOSA1
Microchip Technology
APTGT200A120G
Infineon Technologies
FP15R12W1T7PBPSA1
Infineon Technologies
FD500R65KE3KNOSA1
Fairchild Semiconductor
FMG2G200US60
Infineon Technologies
FF150R12ME3GBOSA1
IXYS