Shopping cart

Subtotal: $0.00

DGD2106MS8-13

Diodes Incorporated
DGD2106MS8-13 Preview
Diodes Incorporated
IC GATE DRV HALF-BRIDGE 8SO 2.5K
$1.88
Available to order
Reference Price (USD)
2,500+
$0.93000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10V ~ 20V
  • Logic Voltage - VIL, VIH: 0.6V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600 V
  • Rise / Fall Time (Typ): 100ns, 35ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO

Related Products

Analog Devices Inc.

LTC7003IMSE#TRPBF

Renesas Electronics America Inc

HIP2100EIBZT

Microchip Technology

MCP14A1202T-E/MNY

Microchip Technology

TC4428AVUA713

Infineon Technologies

IR2104PBF

IXYS Integrated Circuits Division

IXDI602SIATR

Microchip Technology

TC428COA713

Microchip Technology

MCP14A0455T-E/MNY

Infineon Technologies

TLE7182EMXUMA1

Infineon Technologies

IRS21844STRPBF

Top