DMC1029UFDB-13
Diodes Incorporated
Diodes Incorporated
MOSFET N/P-CH 12V 6UDFN
$0.32
Available to order
Reference Price (USD)
1+
$0.31500
500+
$0.31185
1000+
$0.3087
1500+
$0.30555
2000+
$0.3024
2500+
$0.29925
Exquisite packaging
Discount
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Optimize your electronic circuits with Diodes Incorporated s DMC1029UFDB-13, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how DMC1029UFDB-13 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 5.6A, 3.8A
- Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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