DMC2025UFDBQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V U-DFN2020-6
$0.13
Available to order
Reference Price (USD)
1+
$0.12505
500+
$0.1237995
1000+
$0.122549
1500+
$0.1212985
2000+
$0.120048
2500+
$0.1187975
Exquisite packaging
Discount
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Discover high-performance DMC2025UFDBQ-13 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Diodes Incorporated s DMC2025UFDBQ-13 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 3.5A (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA, 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 15nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V, 642pF @ 10V
- Power - Max: 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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