DMC3016LSD-13
Diodes Incorporated
Diodes Incorporated
MOSFET N/P-CH 30V 8.2A/6.2A 8SO
$0.61
Available to order
Reference Price (USD)
2,500+
$0.22860
5,000+
$0.21540
12,500+
$0.20220
25,000+
$0.19296
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the next level of semiconductor technology with Diodes Incorporated s DMC3016LSD-13, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for DMC3016LSD-13.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.2A, 6.2A
- Rds On (Max) @ Id, Vgs: 16mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
- Power - Max: 1.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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