DMC3060LVTQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V TSOT26 T&R
$0.15
Available to order
Reference Price (USD)
1+
$0.14715
500+
$0.1456785
1000+
$0.144207
1500+
$0.1427355
2000+
$0.141264
2500+
$0.1397925
Exquisite packaging
Discount
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Optimize your electronic circuits with Diodes Incorporated s DMC3060LVTQ-13, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how DMC3060LVTQ-13 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 8.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V
- Power - Max: 830mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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