DMC67D8UFDBQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V-60V U-DFN2020-
$0.12
Available to order
Reference Price (USD)
1+
$0.12361
500+
$0.1223739
1000+
$0.1211378
1500+
$0.1199017
2000+
$0.1186656
2500+
$0.1174295
Exquisite packaging
Discount
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The DMC67D8UFDBQ-13 from Diodes Incorporated is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, DMC67D8UFDBQ-13 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Diodes Incorporated s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V, 20V
- Current - Continuous Drain (Id) @ 25°C: 390mA (Ta), 2.9A (Ta)
- Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA, 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.4pC @ 4.5V, 7.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V, 443pF @ 16V
- Power - Max: 580mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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