DMG1016UDW-7
Diodes Incorporated
Diodes Incorporated
MOSFET N/P-CH 20V SOT363
$0.50
Available to order
Reference Price (USD)
3,000+
$0.09600
6,000+
$0.08720
15,000+
$0.07840
30,000+
$0.07400
75,000+
$0.06652
150,000+
$0.06432
Exquisite packaging
Discount
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The DMG1016UDW-7 from Diodes Incorporated is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, DMG1016UDW-7 delivers consistent quality. Contact us now to learn more and secure your supply of Diodes Incorporated s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.07A, 845mA
- Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.74nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 10V
- Power - Max: 330mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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