DMG1016UDWQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT363 T&R
$0.09
Available to order
Reference Price (USD)
1+
$0.08969
500+
$0.0887931
1000+
$0.0878962
1500+
$0.0869993
2000+
$0.0861024
2500+
$0.0852055
Exquisite packaging
Discount
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The DMG1016UDWQ-7 by Diodes Incorporated is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Diodes Incorporated s DMG1016UDWQ-7 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.066A (Ta), 845mA (Ta)
- Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 736.6nC @ 4.5V, 0.62nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 60.67pF @ 10V, 59.76pF @ 16V
- Power - Max: 330mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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