DMG1026UV-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 60V 0.41A SOT-563
$0.44
Available to order
Reference Price (USD)
3,000+
$0.13098
6,000+
$0.12383
15,000+
$0.11668
30,000+
$0.10810
75,000+
$0.10452
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMG1026UV-7 from Diodes Incorporated is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, DMG1026UV-7 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Diodes Incorporated s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 410mA
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
- Power - Max: 580mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Alpha & Omega Semiconductor Inc.
AOE6930
Nexperia USA Inc.
BUK7K5R6-30E,115
Rohm Semiconductor
UM6K34NTCN
Diodes Incorporated
DMHC4035LSD-13
Panjit International Inc.
PJQ5846-AU_R2_000A1
onsemi
EMH2409-TL-H
Panjit International Inc.
PJS6815_S1_00001
Infineon Technologies
IPP120N04S3-02
Advanced Linear Devices Inc.
ALD110908SAL
Toshiba Semiconductor and Storage