DMG1026UVQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2 N-CH 60V 440MA SOT563
$0.13
Available to order
Reference Price (USD)
3,000+
$0.13904
Exquisite packaging
Discount
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The DMG1026UVQ-7 by Diodes Incorporated is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Diodes Incorporated s DMG1026UVQ-7 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.8Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.45pC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
- Power - Max: 650mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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