DMG1029SVQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V SOT563 T&R
$0.15
Available to order
Reference Price (USD)
1+
$0.15246
500+
$0.1509354
1000+
$0.1494108
1500+
$0.1478862
2000+
$0.1463616
2500+
$0.144837
Exquisite packaging
Discount
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The DMG1029SVQ-7 from Diodes Incorporated is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, DMG1029SVQ-7 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Diodes Incorporated s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), 360mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V, 0.28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 25pF @ 25V
- Power - Max: 450mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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