DMG302PU-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 25V 170MA SOT23-3
$0.14
Available to order
Reference Price (USD)
1+
$0.13721
500+
$0.1358379
1000+
$0.1344658
1500+
$0.1330937
2000+
$0.1317216
2500+
$0.1303495
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMG302PU-7 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMG302PU-7 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
- Vgs (Max): -8V
- Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 330mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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