DMG6602SVTX-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V-30V TSOT26 T&R
$0.11
Available to order
Reference Price (USD)
3,000+
$0.12090
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMG6602SVTX-7 from Diodes Incorporated is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, DMG6602SVTX-7 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Diodes Incorporated s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 2.8A (Ta)
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V, 420pF @ 15V
- Power - Max: 840mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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