DMMT5551S-7-F
Diodes Incorporated
Diodes Incorporated
TRANS 2NPN 160V 0.2A SOT26
$0.43
Available to order
Reference Price (USD)
3,000+
$0.10450
6,000+
$0.09925
15,000+
$0.09138
30,000+
$0.08613
75,000+
$0.08000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Achieve peak performance with Diodes Incorporated's DMMT5551S-7-F BJT Arrays, crafted for precision and durability. These arrays feature high-speed operation, low thermal resistance, and excellent matching properties, ensuring consistent results in critical applications. Commonly utilized in data acquisition, telecommunications, and energy management systems. Contact us today to discuss your project requirements and discover how we can help you succeed!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual) Matched Pair
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 160V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Power - Max: 300mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-26
Related Products
Toshiba Semiconductor and Storage
HN1B04FU-GR,LXHF
Microchip Technology
JANTXV2N5796A
onsemi
NSVBT2222ADW1T1G
Infineon Technologies
BC817UPNE6327HTSA1
Linear Integrated Systems, Inc.
IT121 PDIP 8L
Diodes Incorporated
ZXTD717MCTA
Nexperia USA Inc.
PUMX2,115
Toshiba Semiconductor and Storage
HN2C01FU-Y(TE85L,F
onsemi
BC856BDW1T3
Infineon Technologies