DMN2005DLP4K-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 0.3A 6-DFN
$0.54
Available to order
Reference Price (USD)
3,000+
$0.16120
6,000+
$0.15240
15,000+
$0.14360
30,000+
$0.13304
75,000+
$0.12864
Exquisite packaging
Discount
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The DMN2005DLP4K-7 by Diodes Incorporated is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Diodes Incorporated s DMN2005DLP4K-7 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 300mA
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 900mV @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 400mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: X2-DFN1310-6 (Type B)
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