DMN2022UNS-13
Diodes Incorporated
Diodes Incorporated
MOSFET 8V 24V POWERDI3333-8
$0.25
Available to order
Reference Price (USD)
3,000+
$0.26925
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with Diodes Incorporated s DMN2022UNS-13, a top-tier choice in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. Known for their durability and high efficiency, these components are essential for modern electronics. Key features include robust construction, low on-resistance, and fast switching capabilities. Ideal for use in power supplies, motor control, and audio amplifiers. Reach out to us now to learn more about how DMN2022UNS-13 can meet your specific needs and boost your application performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
- Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
- Power - Max: 1.2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXB)
Related Products
Diodes Incorporated
DMG1016V-7
Rohm Semiconductor
US6K2TR
Diodes Incorporated
DMC1028UVT-13
Diodes Incorporated
DMN6070SSDQ-13
Diodes Incorporated
DMC2710UV-13
onsemi
FDMD8280
Diodes Incorporated
DMC3401LDW-13
onsemi
NTLJD3183CZTBG
Panjit International Inc.
PJS6839_S1_00001
Toshiba Semiconductor and Storage