DMN2025UFDB-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V-24V U-DFN2020-6
$0.14
Available to order
Reference Price (USD)
10,000+
$0.14988
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance DMN2025UFDB-13 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Diodes Incorporated s DMN2025UFDB-13 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V
- Power - Max: 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
Related Products
Vishay Siliconix
SQJQ906EL-T1_GE3
Diodes Incorporated
DMT3020UFDB-7
Microchip Technology
TC8020K6-G
onsemi
EFC6611R-TF
Diodes Incorporated
DMN1003UCA6-7
Renesas Electronics America Inc
FX30KMJ-3#B00
onsemi
FDC3601N
Diodes Incorporated
DMN67D8LDW-7
onsemi
FDMC9430L-F085
NXP USA Inc.