DMN2053UFDBQ-13
Diodes Incorporated

Diodes Incorporated
MOSFET BVDSS: 8V~24V U-DFN2020-6
$0.14
Available to order
Reference Price (USD)
1+
$0.13635
500+
$0.1349865
1000+
$0.133623
1500+
$0.1322595
2000+
$0.130896
2500+
$0.1295325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN2053UFDBQ-13 from Diodes Incorporated is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, DMN2053UFDBQ-13 delivers consistent quality. Contact us now to learn more and secure your supply of Diodes Incorporated s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
- Power - Max: 820mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)