DMN2053UVTQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V TSOT26 T&R
$0.10
Available to order
Reference Price (USD)
1+
$0.09857
500+
$0.0975843
1000+
$0.0965986
1500+
$0.0956129
2000+
$0.0946272
2500+
$0.0936415
Exquisite packaging
Discount
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Boost your project s performance with Diodes Incorporated s DMN2053UVTQ-13, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, DMN2053UVTQ-13 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of DMN2053UVTQ-13.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
- Power - Max: 700mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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