DMN2300UFD-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 1.21A 3DFN
$0.12
Available to order
Reference Price (USD)
3,000+
$0.12594
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMN2300UFD-7 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMN2300UFD-7 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.21A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 900mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 67.62 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 470mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1212-3
- Package / Case: 3-UDFN
Related Products
onsemi
2SK4066-1E
STMicroelectronics
STD4NK80Z-1
Renesas Electronics America Inc
2SJ493-AZ
onsemi
NTA7002NT1G
Rohm Semiconductor
R6004PND3FRATL
Renesas Electronics America Inc
NP82N04NLG-S18-AY
onsemi
NVMTS0D7N04CLTXG
Renesas Electronics America Inc
UPA2802T1L-E2-AY
IXYS
IXTA100N04T2
Alpha & Omega Semiconductor Inc.