DMN3013LFG-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V-30V POWERDI333
$0.34
Available to order
Reference Price (USD)
3,000+
$0.36295
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN3013LFG-13 by Diodes Incorporated is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Diodes Incorporated s DMN3013LFG-13 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc)
- Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
- Power - Max: 2.16W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerLDFN
- Supplier Device Package: PowerDI3333-8 (Type D)
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