DMN3032LFDBQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2NCH 30V 6.2A UDFN2020
$0.17
Available to order
Reference Price (USD)
1+
$0.17325
500+
$0.1715175
1000+
$0.169785
1500+
$0.1680525
2000+
$0.16632
2500+
$0.1645875
Exquisite packaging
Discount
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Optimize your electronic circuits with Diodes Incorporated s DMN3032LFDBQ-13, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how DMN3032LFDBQ-13 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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