DMN3032LFDBWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V U-DFN2020-
$0.30
Available to order
Reference Price (USD)
1+
$0.30090
500+
$0.297891
1000+
$0.294882
1500+
$0.291873
2000+
$0.288864
2500+
$0.285855
Exquisite packaging
Discount
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The DMN3032LFDBWQ-13 by Diodes Incorporated is a standout in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Engineered for excellence, these components offer unmatched reliability and performance. Features such as high voltage tolerance, low gate charge, and superior thermal management make them a preferred choice. Applications range from industrial automation to consumer electronics. Don t miss out on the opportunity to integrate DMN3032LFDBWQ-13 into your systems contact us for more details and pricing.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 15V
- Power - Max: 820mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: -
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