DMN3055LFDBQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V U-DFN2020-
$0.14
Available to order
Reference Price (USD)
1+
$0.14230
500+
$0.140877
1000+
$0.139454
1500+
$0.138031
2000+
$0.136608
2500+
$0.135185
Exquisite packaging
Discount
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The DMN3055LFDBQ-7 from Diodes Incorporated is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, DMN3055LFDBQ-7 delivers consistent quality. Contact us now to learn more and secure your supply of Diodes Incorporated s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: -
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 15V
- Power - Max: 810mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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