DMN3135LVT-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 3.5A TSOT26
$0.49
Available to order
Reference Price (USD)
3,000+
$0.18574
6,000+
$0.17501
15,000+
$0.16429
30,000+
$0.15678
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN3135LVT-7 by Diodes Incorporated is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Diodes Incorporated s DMN3135LVT-7 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
- Power - Max: 840mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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