DMN33D8LDWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT363 T&R
$0.07
Available to order
Reference Price (USD)
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$0.07374
500+
$0.0730026
1000+
$0.0722652
1500+
$0.0715278
2000+
$0.0707904
2500+
$0.070053
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Enhance your electronic applications with Diodes Incorporated s DMN33D8LDWQ-13, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of DMN33D8LDWQ-13 today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
- Power - Max: 350mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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