DMN33D9LV-13A
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT563 T&R
$0.10
Available to order
Reference Price (USD)
1+
$0.09633
500+
$0.0953667
1000+
$0.0944034
1500+
$0.0934401
2000+
$0.0924768
2500+
$0.0915135
Exquisite packaging
Discount
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Optimize your electronic circuits with Diodes Incorporated s DMN33D9LV-13A, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how DMN33D9LV-13A can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 48pF @ 5V
- Power - Max: 430mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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