DMN3730UFB-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 750MA 3DFN
$0.51
Available to order
Reference Price (USD)
3,000+
$0.19050
6,000+
$0.17950
15,000+
$0.16850
30,000+
$0.16080
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with DMN3730UFB-7, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMN3730UFB-7 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 64.3 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 470mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1006-3
- Package / Case: 3-UFDFN
Related Products
Vishay Siliconix
SIHD6N65ET5-GE3
Infineon Technologies
IPP05CN10NGXKSA1
onsemi
NDD03N50Z-1G
Vishay Siliconix
SIA421DJ-T1-GE3
IXYS
IXTP62N15P
Diodes Incorporated
DMP3056LSSQ-13
Infineon Technologies
IRFR825TRPBF
Panjit International Inc.
PJQ4442P-AU_R2_000A1
Infineon Technologies
IRFH8330TRPBF
IXYS