DMN4035L-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 40V 4.6A SOT23
$0.10
Available to order
Reference Price (USD)
1+
$0.09602
500+
$0.0950598
1000+
$0.0940996
1500+
$0.0931394
2000+
$0.0921792
2500+
$0.091219
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMN4035L-13 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMN4035L-13 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 720mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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