DMN601DWKQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CHAN 41V 60V SOT363
$0.42
Available to order
Reference Price (USD)
3,000+
$0.08160
6,000+
$0.07412
15,000+
$0.06664
30,000+
$0.06290
75,000+
$0.05654
150,000+
$0.05467
Exquisite packaging
Discount
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Boost your project s performance with Diodes Incorporated s DMN601DWKQ-7, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, DMN601DWKQ-7 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of DMN601DWKQ-7.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 305mA (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Power - Max: 200mW
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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