DMN61D9UDWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V SOT363 T&R
$0.04
Available to order
Reference Price (USD)
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$0.04189
500+
$0.0414711
1000+
$0.0410522
1500+
$0.0406333
2000+
$0.0402144
2500+
$0.0397955
Exquisite packaging
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Upgrade your electronic designs with Diodes Incorporated s DMN61D9UDWQ-13, a top-tier choice in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. Known for their durability and high efficiency, these components are essential for modern electronics. Key features include robust construction, low on-resistance, and fast switching capabilities. Ideal for use in power supplies, motor control, and audio amplifiers. Reach out to us now to learn more about how DMN61D9UDWQ-13 can meet your specific needs and boost your application performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 318mA (Ta)
- Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V
- Power - Max: 370mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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