DMN62D0SFD-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 540MA 3DFN
$0.52
Available to order
Reference Price (USD)
3,000+
$0.09240
6,000+
$0.08316
15,000+
$0.07392
30,000+
$0.06930
75,000+
$0.06145
150,000+
$0.05914
Exquisite packaging
Discount
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DMN62D0SFD-7 by Diodes Incorporated is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, DMN62D0SFD-7 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 30.2 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 430mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1212-3
- Package / Case: 3-UDFN
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