DMN65D8LDW-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 60V 0.18A SOT363
$0.39
Available to order
Reference Price (USD)
3,000+
$0.07512
6,000+
$0.06823
15,000+
$0.06135
30,000+
$0.05791
75,000+
$0.05205
150,000+
$0.05033
Exquisite packaging
Discount
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The DMN65D8LDW-7 from Diodes Incorporated is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, DMN65D8LDW-7 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Diodes Incorporated s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 180mA
- Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
- Power - Max: 300mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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