DMNH6065SPDWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V-60V POWERDI506
$0.48
Available to order
Reference Price (USD)
1+
$0.48110
500+
$0.476289
1000+
$0.471478
1500+
$0.466667
2000+
$0.461856
2500+
$0.457045
Exquisite packaging
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Boost your project s performance with Diodes Incorporated s DMNH6065SPDWQ-13, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, DMNH6065SPDWQ-13 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of DMNH6065SPDWQ-13.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
- Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 466pF @ 25V
- Power - Max: 2.4W (Ta), 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type R)
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